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The typical unloading events – “pop-out” and “elbow” were well investigated and
                  discussed in the literature [1, 12] and were found to be the result of the formation of
                  Si-III/Si-XII and a-Si phases respectively. The “kink pop-out” was shown to be related
                  to the formation of Si-III/Si-XII and in some cases to a mixture of Si-III/Si-XII and
                  a-Si and appeared more frequently for higher loads and slower unloading rates [13].
                      The reasons leading to the “kink pop-out” emergence with the increase of holding
                  time are not quite clear and have to be clarified. The magnified portions of P–h curves
                  containing the unloading events (Fig. 2) display the similarity of “kink pop-out” event
                  with “elbow” one, which is known to be responsible for the a-Si phase formation: both
                  of them demonstrate more gradual pushing out of the indenter caused by the growth of
                  material volume, comparatively with the “pop-out”, which represents a sharp, hopping
                  expulsion of the indenter from the material. The calculations of the derivatives dh/dP
                  of the P(h) dependences for different unloading events are presented in Table. The phy-
                  sical  meaning  of  dh/dP  represents  the  rate  of  the  depth  recovery  at  load  decrease,
                  which is none other than ctga, where a is the slope of the P–h curve (see Fig. 2b). The
                  data from Table showed close values between “kink pop-out” and “elbow” events indi-
                  cating that the kinetics of these two processes is similar as well.

                             Derivatives dh/dP for the unloading events on the P–h curves

                     Load,    Holding time,    Mean values of dh/dP for the unloading event, nm/mN
                      mN           s           “pop-out”       “elbow”      “kink pop-out”
                                   5             77.7           12.8              –
                      50
                                  900            80.2            –              18.1
                                   5             76.5            7.0              –
                      100
                                  900            78.7            –               7.5
                                   5              –              –               2.4
                      500
                                  900             –              –               2.5

                      Micro-Raman spectroscopy of indentations. The micro-Raman spectroscopy of
                  indentations were carried out in order to find out whether the end structural phases in
                  the indentation zone are affected by prolonged holding.
                      The  micro-Raman  spectra  of  indentations  made  at  both  short  and  long  holding
                  time were acquired from the zones situated in immediate proximity to the surface of
                  indentation (Fig. 3, spectra 1, 3) and from the regions situated at some depth (Fig. 3,
                  spectra 2, 4). One can see that for short holding indentations (Fig. 3, spectra 1, 2) the
                                                –1
                  peak  responsible  for  a-Si  (470  cm )  is  more  pronounced  at  the  surface  than  in  the
                  depth, but with the increase of holding time (Fig. 3, spectra 3, 4) just vice-versa, the
                                                                                         –1
                  a-Si peak becomes more intensive in the depth (to compare with Si-XII (350 cm ),
                                     –1                      –1
                  Si-III (372 and 433 cm ) and Si-I (301 and 520 cm ) peaks).
                      It was shown by Tachi et al. [14] that the amorphous phase can be created not
                  only in the closed vicinity to the indentation surface where the compressive stresses are
                  maximum, but also in  the  dislocation zone as a result of the  motion of dislocations
                  during plastic deformation having the shape of thin layers oriented along the main slip
                  planes {111} of Si. Longer acting of the external load may contribute to the intensifica-
                  tion of these processes leading to the extension of these amorphous zones. The “kink
                  pop-out” effect on the P–h curves is supposed to be caused by the formation of the
                  amorphous phase as a result of dislocation activity. As it was shown above, the kinetics
                  of the “kink pop-out” is similar to that of the “elbow”, which is known to be the result
                  of  the  amorphous  phase  formation  during  unloading  and  this  fact  is  in  a  good
                  agreement with the obtained micro-Raman spectroscopy results.

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